Scanning electron microscope MIRA3 made by Tescan, Brno is fully PC controlled SEM equipped with a Schottky Field Emission electron gun designed for high vacuum or variable pressure operations.

SEM equipped SE (Secondary electrons) and BSE (Back-scattered electrons) detectors. Both detectors are, as well, located in the objective lens enabling work at very short working distances for high resolution.

Parameters:

• Maximal resolution: 1 nm by 30kV
• Magnification range: 2x - 1 000 000x

Accessories:

• EDX - Energy Dispersive X-ray Spectroscopy
• WDS - Wavelength Dispersive Spectroscopy
• EBIC – Electron Beam Induced Current

Extended low vacuum mode with chamber pressure up to 500 Pa for non-conducting specimens imaging.

Key Features:

• Photoelectron Spectroscopy
  • Energy Resolution FWHM ≤ 0.45 eV of the Ag 3d5/2 peak
  • Spatial Resolution ≤ 20 µm
• 2D Imaging/Mapping
  • Spatial Resolution < 3 µm chemical imaging resolution
• Depth Profiling
  • Angle Resolved XPS - destruction-free analysis, information depth ≤ 10 nm
  • Destructive depth profiling by an ion etching, information depth ~ 1µm
• Small Area XPS - Small feature analysis from 20 to 900 µm
• Ultraviolet Photoelectron Spectroscopy
• Reflection Electron Energy Loss Spectroscopy
• Ion Scattering Spectroscopy

Applications:

• Polymers, Glasses, Ceramics
• Semiconductors
• Magnetic and dielectric materials
• Nanomaterials
• Catalysis
• Corrosion
• Biomedicine/Biotechnology
• Industry (Aerospace, Automotive, Pharmaceutical, Telecommunications, etc.)

Parameters:

• Elemental and molecular information
• Isotopic analysis
• Very high surface sensitivity (1x109atoms/cm2)
• Positive and Negative SIMS
• Conducting and insulating surfaces
• Mass resolution >3000 M/ΔM
• Mass range >1000 m/z
• Analytical spatial resolution to 0.5µm
• Sputter cleaning capability

Applications:

• Polymers, Glasses, Ceramics
• Semiconductors
• Magnetic and dielectric materials
• Nanomaterials
• Catalysis
• Corrosion
• Biomedicine/Biotechnology
• Industry (Aerospace, Automotive, Pharmaceutical, Telecommunications, etc.)

Parameters:

• Scanning by probe and by sample, easy changing scanning modes
• Scan range: 100x100x12 mm
• XY sample positioning: 5x5 mm²
• Sensitivity better than 2 micrometres

Testing modes:

• contact/non-contact mode
• lateral force mode
• phase contrast mode
• magnetic and electric
• force microscopy force modulation
• resonance spectroscopy
• kelvin probe

Accessories:

• Variable repetition rate N2 laser (337 nm) for desorption of the sample.
• Quadruple ion trap allows the high-resolution selection of parent ions and highly controlled collision induced dissociation (CID) for high-sensitivity MSn acquisitions.
• TOF mass spectrometer in reflection mode promotes high resolution and high mass accuracy for all ions generated.
• Software solution for a wide range of applications enables manual or fully automated operation for few or many samples, as required.

Applications:

• Analysis of small molecules – organic and inorganic.
• Structural characterization and identification of synthetic polymers.
• Structural characterization and sequencing of biomolecules like peptides, proteins, etc.
• It can also be applied to follow purity of various materials, drugs, medicaments, to analyse polymers and also thin or nano-layers. Characterization of purity of glass, silicon, metals etc. surfaces is possible if the thickness of sample is below 0.5 mm.

Testing modes:

• Quasistatic nanoindentation – Measure Young’s modulus, hardness, fracture toughness and other mechanical properties via nanoindentation
• Scratch testing – Quantify scratch resistance, critical delamination forces, and friction coefficients with simultaneous normal and lateral force and displacement monitoring
• Top-down optics – High- resolution, color CCD camera for individual structure identification and coarse test positioning
• SPM imaging – In-situ imaging using the indenter tip provides nanometer precision test positioning and surface
• topography information
• ScanningWear™ – Observe and quantify wear volumes and wear rates using the in-situ imaging capability
• Feedback control – Operate in closed loop load or displacement control for superior nanoindentation and creep

Transducer Specifications:

• Load:
  • Resolution: <1 nN
  • Noise Floor: <30 nN
  • Imaging Contact Force: ≤70 nN
• Displacement:
  • Resolution: <0.02 nm
  • Noise Floor: <0.2 nm
  • Drift: <0.05 nm/sec

Stage Specifications:

X and Y stages:

• Travel: 250 mm × 150 mm
• Encoder Resolution: 500 nm

Applications:

• Testing of mechanical and tribological properties of thin films, coatings and plasma treated surfaces from nano- to microscale

Parameters:

High flexibility of Raman analysis is provided by three laser sources - HeCd 325 nm, semiconductor 532 nm laser and a second semiconductor laser at 785 nm. The detector is fitted by a 1024 x 25s pixel CCD with very high spectral resolution of 0.5 cm^-1/pixel for 325 nm laser up to 0.2 cm^-1/pixel for 785 nm laser. The focusing distance of the spectrometer is 800 mm. The laser is optically coupled with a confocal microscope equipped with 10x, 50x and 100x objectives as well as fully achromatic (cassegrain) 74x objective. In addition the sample stage is fully motorized in X,Y axes (75 x 50 mm with the step of 0.1 micrometers) as well as Z axis (step of 0.01 micrometers) and therefore high spectral and spatial definition sample surface mapping is possible.

Applications:

• Raman analysis of samples with high spectral and spatial definition 2D and 3D mapping possible
• Wide spectral range measurements NIR-VIS-UV 10 – 2200 cm-1 for wide range of samples

Parameters:

The device is equipped with a sealed X-ray source with copper anode and vertical theta-theta goniometer with horizontal sample site with independent source and detector movement. The smallest goniometer step is 0,0001°, which enables us to perform high definition measurements. The goniometer movement is limited to a wide arc of -3° - 160° (2 theta). The sample can be tilted from -5° to 95°. In-plane measurements with horizontally attached sample can be performed using in-plane detector movement in the range of -3° - 120°. 1D detector in Bragg-Bretano configuration as well as 0D detector in parallel beam configuration can be used for the measurement. This versatile configuration enables us to measure both out-of-plane and in-plane diffractions. SAXS and reflectivity measurement adaptors are also available.

Applications:

• Structural and phase analysis of crystalline samples
• Low and high resolution measurements available
• Samples in the form of powders, nano-particles, mono- and multi-layer as well as bulk samples can be measured
• Sample size from several millimetres to 6“ wafers

Parameters:

• CCD camera, 61 fps (780 × 580 px) or 311 fps (780 × 60 px)
• Axis: Software controlled x, y, z axes
• Contact angle range: 1 - 180°, Contact angle resolution: 0.1°
• Surface energy range: 1×10^-2 – 1000 mN/m (mJ/m²), Surface energy resolution: 0.01 mN/m (mJ/m²)
• Video sequences, automatic triggering of measurements

Software:

• 6 different methods of drop shape analysis
• Automatic baseline detection
• Autodrop delivery
• Pendant drop method
• Surface and interfacial tension of liquids

Applications:

• Various surfaces: Si-wafers, glass, polymers, etc.

Parameters:

• Optical system: UIS2 Optical System (Infinity-corrected)
• Total magnification: 108x - 17280x
• Field of view: 2560x2560 - 16x16 µm
• Microscope frame
• Observation method: BF/DIC/Laser/Laser Confocal DIC
• Laser: 405 nm Semiconductor Laser
• White light: White LED
• Focus: Z Stage Stroke: 100 mm, Maximum Height of Specimen: 100 mm
• Z revolving nosepiece: Stroke 10 mm, Resolution 0.01 µm, Repeatability σn-1=0.012 µm
• Objective lens: 5x, 10x, 20x, 50x, 100x
• Optical zoom: 1x - 8x
• Stage: Motorized Stage 100x100 mm
• Dimensions: 276(W)x358(D)x405(H) mm
• Weight: 32 kg (Main Unit)

Parameters:

• Measurement technique: Stylus profilometry (contact measurement)
• Measurement capability: Two-dimensional surface profile measurements Optional three-dimensional measurement/analyses
• Sample viewing: Digital magnification, 0.275 to 2.2mm vertical FOV
• Stylus sensor: Low Inertia Sensor (LIS 3)
• Stylus force: 1 to 15mg with LIS 3 sensor
• Low force option: N-Lite+ Low Force with 0.03 to 15mg (optional)
• Stylus options: Stylus radius options from 50nm to 25 m High Aspect Ratio (HAR) tips 10 m x 2 m and 200 m x 20 m; Custom tips available upon request
• Sample X/Y stage: Manual 100mm (4 in.) X/Y, manual leveling; Motorized 150mm (6 in.) X/Y, manual leveling
• Sample R-Theta stage: Manual, continuous 360 degrees; Motorized, continuous 360 degrees
• Scan length range: 55mm (2in.); 200mm (8in.) with scan stitching capability
• Data points per scan: 120000 maximum
• Max. sample thickness: 50mm (1.95in.)
• Max. wafer size: 200mm (8in.)
• Step height repeatability: <5Å, 1sigma on 0.1μm step
• Vertical range: 1mm (0.039in.)
• Vertical resolution: 1Å max. (@ 6.55_m range)
• Input power 100 – 240 VAC, 50 – 60Hz
• Temperature operating range: 20 to 25°C (68 to 77°F)

The tester of adhesion REVETEST Xpress plus CRM Instruments is instrumentation for characterization of thin film-substrate systems (adhesion, fracture and deformation) and for quantification of coatings adhesion. The system includes penetration depth measurement, handling of large samples (up to 300 mm), video microscope for observation of failure creation, automatic software for adhesion and friction evaluation, real time display of normal force, friction force, friction coefficient, depth. The scratch modes includes constant, progressive and incremental loads, matrix of scratch tests and multicycles for wear studies. The load range covers testing loads from 0,5 to 200 N.

Parameters:

• Force range: max 10kN, equipped by two dynamometer 100N and 5kN
• Loading method: Direct high-precision constant speed strain control method via non-backlash ball screw drive
• Force measurement: Within 1% indicated test force (at 1/500 to 1/1 load cell rating)
• Crosshead speed range: 0.001 to 1000 mm/min (stepless)